2010-03-12 BFP540FESD 1 1 2 4 3 npn silicon rf transistor* ? for esd protected high gain low noise amplifier ? excellent esd performance typical value 1000 v (hbm) ? outstanding g ms = 20 db noise figure f = 0.9 db ? sieget ? 45 - line ? pb-free (rohs compliant) package 1) ? qualified according aec q101 * short term description esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package BFP540FESD aus 1=b 2=e 3=c 4=e - - tsfp-4 maximum ratings parameter symbol value unit collector-emitter voltage t a > 0c t a 0c v ceo 4.5 4 v collector-emitter voltage v ces 10 collector-base voltage v cbo 10 emitter-base voltage v ebo 1 collector current i c 80 ma base current i b 8 total power dissipation 2) t s 80 c p tot 250 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 1 pb-containing package may be available upon special request 2 t s is measured on the collector lead at the soldering point to the pcb
2010-03-12 BFP540FESD 2 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 280 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 4.5 5 - v collector-emitter cutoff current v ce = 10 v, v be = 0 i ces - - 10 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - - 10 a dc current gain i c = 20 ma, v ce = 3.5 v, pulse measured h fe 50 110 170 - 1 for calculation of r thja please refer to application note thermal resistance
2010-03-12 BFP540FESD 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 50 ma, v ce = 4 v, f = 1 ghz f t 21 30 - ghz collector-base capacitance v cb = 2 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.16 0.26 pf collector emitter capacitance v ce = 2 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.4 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.55 - noise figure i c = 5 ma, v ce = 2 v, f = 1.8 ghz, z s = z sopt i c = 5 ma, v ce = 2 v, f = 3 ghz, z s = z sopt f - - 0.9 1.3 1.4 - db power gain, maximum stable 1) i c = 20 ma, v ce = 2 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 20 - db power gain, maximum available 1) i c = 20 ma, v ce = 2 v, z s = z sopt , z l = z lopt , f = 3 ghz g ma - 14.5 - db transducer gain i c = 20 ma, v ce = 2 v, z s = z l = 50 ? , f = 1 . 8ghz i c = 20 ma, v ce = 2 v, z s = z l = 50 ? , f = 3ghz | s 21e | 2 15.5 - 18 13 - - db third order intercept point at output 2) v ce = 2 v, i c = 20 ma, z s = z l = 50 ? , f = 1 . 8ghz ip 3 - 24.5 - dbm 1db compression point at output i c = 20 ma, v ce = 2 v, z s = z l = 50 ? , f = 1 . 8ghz p -1db - 11 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ), g ms = | s 21e / s 12e | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
2010-03-12 BFP540FESD 4 spice parameter for the spice model as well as for s-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.model . please consult our website and download the latest versions before actually starting your design. you find the BFP540FESD spice model in the internet in mwo- and ads- tools very quickly and conveniently. the simulation data have been generated and verified using typical devices. the BFP540FESD spice model reflects the typical dc- and rf-performance with high accuracy. the spice model of BFP540FESD will be available in q02 / 2010.
2010-03-12 BFP540FESD 5 package tsfp-4 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel bfp420f type code pin 1 0.35 0.45 0.9 0.5 0.5 4 0.2 1.55 0.7 1.4 8 pin 1 0.05 0.2 0.05 1.4 12 10? max. 0.05 0.8 1.2 0.05 0.04 0.55 0.05 0.2 0.05 0.15 0.05 0.2 0.5 0.05 0.5 0.05 43 manufacturer
2010-03-12 BFP540FESD 6 edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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